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DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDG-101-1B 1 AMP HIGH RELIABILITY SILICON DIODES FEATURES MECHANICAL SPECIFICATION R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) ACTUAL SIZE OF DO-41 PACKAGE SERIES GP100 - GP110 DO - 41 LL BD (Dia) EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES LOW FORWARD VOLTAGE DROP 1A at TA = 75 C WITH NO THERMAL RUNAWAY MECHANICAL DATA LL Case: JEDEC DO-41, molded epoxy (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Color band denotes cathode Mounting Position: Any Weight: 0.012 Ounces (0.34 Grams) LD (Dia) Color Band Denotes Cathode BL S RoH PLI OM C ANT Sym BL BD LL LD Minimum In mm 0.160 0.103 1.00 0.028 4.1 2.6 25.4 0.71 Maximum In mm 5.2 0.205 0.107 0.034 2.7 0.86 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 2HG A 6F 3(c)! # (c)(c)! #1 (c)(c)& 6! 9 3(c)E #$) ! 71 % ) " )#& 2(c)& 6! 9 (c)(c) 3#3 9 ! # 7 D(c)A @ ! 9 8(c)0 (c)' 7(c) (c)"6! (c) 54 1 % )$1 &! CB 7 ( % ! ' %| 21 )!" 3 ! 0 (c)! ( (c)' ! (c)! #$ (c)" ! (c) ! (c) (c) #! & %$ #! | PARAMETER (TEST CONDITIONS) Series Number SYMBOL X5HA AEAEA A RATINGS ecc ae a aaa a YUU U O x O O O NI I 5aX8UXOHEO8HEII6HEC EEE E UNITS Ip Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range (c) Xii3 iD(c) D3 D 5iHDD i3D (R) (c) | 35 D3 5 3D3 6i8H* | 1/4 C TT hge d i8fDc 8u ~X{ z | } | y x ba 3 Typical Thermal Resistance, Junction to Ambient (Note 1) R Xv w 6 R A Maximum Average DC Reverse Current At Rated DC Blocking Voltage @ T = 25 C @ T = 125 C IQ C/W pF C y t Xs ut r p q YW UT XV 6 Maximum Full Cycle Reverse Current @ T = 75 C (Note 1) 3/4 1/2 IS o 5 Maximum Forward Voltage at 1 Amp DC A A V Xl m I k Average Forward Rectified Current @ T = 75 C, Lead length = 0.375 in. (9.5 mm) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load) n vt 6u Maximum Peak Recurrent Reverse Voltage P I Vt hh XXg uu 8Xu X8i jj X8 oo Xo Xi i sr 6 Maximum RMS Voltage Vq yy 8X fe XXd uo 88/ XX 8 o Xn Xe i u x Maximum DC Blocking Voltage Vw yy XXyu XX oo 8Xo X8 X8 Xi Xe e VOLTS AMPS VOLTS A H5 DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDG-101-2B 1 AMP HIGH RELIABILITY SILICON DIODES RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110 1.2 Average Forward Current, Io (Amperes) Peak Forward Surge Current (Amperes) 1.0 0.8 0.6 0.2 0 0 50 100 150 180 FIGURE 1. FORWARD CURRENT DERATING CURVE Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 10 Instantaneous Reverse Current, I (Microamperes) Instantaneous Forward Current (Amperes) 1.0 1.0 .1 0.1 0.01 0.6 0.7 08 0.9 1.0 1.1 1.2 1.3 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE TJ = 25 oC Peak Forward Surge Current (Amperes) Capacitance, pF Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE Pulse Duration (Milliseconds) FIGURE 6. PEAK FORWARD SURGE CURRENT 3 4 3 0 2 1 0 ) ( &' % H6 (c) Y (c) c| 0 40 d ca b i eerp fc d c yw x uh t r g vspqi c T R S (R) WV XU U hhh cg QQ P f e BB (c)A s (c) cs } X vsq 0.1 .01 (c) * vsq A AA3/4 A AA1/41/2 | $ Ambient Temperature, C q~ q { ~ | { z x rX y }ssy w vu sq XXt ropmyj nklk ! 0.4 # " DC 7 @ 8 9 G E F IH I 6 5 |
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